HGTP1N120BND TRANSISTOR DE EFECTO CAMPO TECHNICAL DATA SHEET
HGTP1N120BND
Encapsulados :
Fabricantes : INTERSIL[Intersil Corporation]
Pasadores :
Descripción :
5.3A, 1200V, Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Temperatura : Min °C | Max °C