HGTD3N60B3S9A TRANSISTOR DE EFECTO CAMPO TECHNICAL DATA SHEET

HGTD3N60B3S9A

Encapsulados :

Fabricantes :

Pasadores :

Descripción :
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3.5A I(C) | TO-252AA

Temperatura : Min °C | Max °C

HGTD3N60B3S9A