HGT1S7N60C3DS9A TRANSISTOR DE EFECTO CAMPO TECHNICAL DATA SHEET

HGT1S7N60C3DS9A

Encapsulados :

Fabricantes :

Pasadores :

Descripción :
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-263AB

Temperatura : Min °C | Max °C

HGT1S7N60C3DS9A