HGT1S5N120CNDS TRANSISTOR DE EFECTO CAMPO TECHNICAL DATA SHEET
HGT1S5N120CNDS
Encapsulados :
Fabricantes : INTERSIL[Intersil Corporation]
Pasadores :
Descripción :
1200V, Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Temperatura : Min °C | Max °C