HGT1S1N120CNDS TRANSISTOR DE EFECTO CAMPO TECHNICAL DATA SHEET
HGT1S1N120CNDS
Encapsulados :
Fabricantes : Intersil Corporation
Pasadores :
Descripción :
6.2A, 1200V, Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Temperatura : Min °C | Max °C