HGT1S1N120BNDS TRANSISTOR DE EFECTO CAMPO TECHNICAL DATA SHEET
HGT1S1N120BNDS
Encapsulados :
Fabricantes : Intersil Corporation
Pasadores :
Descripción :
5.3A, 1200V, SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE
Temperatura : Min °C | Max °C