HGT1S1N120 TRANSISTOR DE EFECTO CAMPO TECHNICAL DATA SHEET
HGT1S1N120
Encapsulados :
Fabricantes : INTERSIL[Intersil Corporation]
Pasadores :
Descripción :
6.2A 1200V Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Temperatura : Min °C | Max °C