HGT1S12N60A4DS TRANSISTOR DE EFECTO CAMPO TECHNICAL DATA SHEET
HGT1S12N60A4DS
Encapsulados :
Fabricantes : Fairchild Semiconductor
Pasadores :
Descripción :
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Temperatura : Min °C | Max °C