GP200MHB12S TRANSISTOR DE EFECTO CAMPO TECHNICAL DATA SHEET

GP200MHB12S

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Fabricantes :

Pasadores :

Descripción :
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 200A I(C)

Temperatura : Min °C | Max °C

GP200MHB12S