FGB20N6S2DT TRANSISTOR DE EFECTO CAMPO TECHNICAL DATA SHEET
FGB20N6S2DT
Encapsulados :
Fabricantes : Fairchild Semiconductor
Pasadores :
Descripción :
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
Temperatura : Min °C | Max °C
FGB20N6S2DT